Title :
A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
Author :
Zhang, Xingui ; Guo, Hua Xin ; Gong, Xiao ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga0.47As source and drain, series resistance of ~250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an ION/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; molybdenum; EOT; FinFET; In0.53Ga0.47As; channel length; gate-last process; molybdenum source-drain contact; nonplanar device; self-aligned molybdenum contact; series resistance; size 3 nm; size 500 nm; voltage 0.5 V; FinFETs; Indium gallium arsenide; Logic gates; Metals; Resistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343362
