Title :
A 5V Only 16Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies
Author :
Kodama, N. ; Saitoh, K. ; Shirai, H. ; Okazawa, T. ; Hokari, Y.
Author_Institution :
NEC Corporation, Japan
Keywords :
Boron; Degradation; EPROM; Electron traps; National electric code; Pulse measurements; Threshold voltage; Transistors; Tunneling; Writing;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705997
