Title :
Pulsed I(V) — pulsed RF measurement system for microwave device characterization with 80ns/45GHz
Author :
Weis, M. ; Fregonese, Sébastien ; Santorelli, Marco ; Sahoo, Amit Kumar ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution :
Lab. IMS, Univ. Bordeaux 1, Talence, France
Abstract :
This paper presents a combined pulsed I(V) - pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the save operating area (SOA) of advanced SiGe:C HBTs. System configuration, measurements and accuracy issues are presented.
Keywords :
heterojunction bipolar transistors; measurement systems; pulse measurement; HBT; isothermal AC measurement data; isothermal DC measurement data; microwave device characterization; pulsed RF measurement system; save operating area; system configuration; Current measurement; Electrical resistance measurement; Heterojunction bipolar transistors; Pulse measurements; Radio frequency; Temperature measurement; Voltage measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343365
