Title :
Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology
Author :
Cho, Youngseung ; Hwang, Yoosang ; Kim, Huijung ; Lee, Eunok ; Hong, Soojin ; Chung, Hyunwoo ; Kim, Daeik ; Kim, Jiyoung ; Oh, Yongchul ; Hong, Hyeongsun ; Jin, Gyo-Young ; Chung, Chilhee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Hwasung, South Korea
Abstract :
Novel Deep Trench Buried-Body-Contact (DBBC) has been successfully developed for 4F2 DRAM cells on sub-30nm technology node. The critical requirements of thermal stability, shallow junction depth, and conformal source-drain doping profile for the contact are achieved by using an ultra thin Ti silicide ohmic layer and PLAD technique, which also show excellent electrical performance and process feasibility for the development of 4F2 DRAM cell on the 30nm node and beyond.
Keywords :
DRAM chips; semiconductor doping; thermal stability; 4F2 DRAM cell; DRAM technology; PLAD technique; conformal source-drain doping profile; deep trench buried-body-contact; electrical performance; process feasibility; shallow junction depth; sub-30nm technology node; thermal stability; ultra thin titanium silicide ohmic layer; Contact resistance; Heat treatment; Junctions; Random access memory; Silicides; Silicon; Thermal stability;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343366
