New parameter extraction method based on split C-V for FDSOI MOSFETs

Author

Ben Akkez, I. ; Cros, A. ; Fenouillet-Beranger, C. ; Boeuf, F. ; Rafhay, Q. ; Balestra, F. ; Ghibaudo, G.

Author_Institution

IMEP-LAHC, Grenoble, France

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

217

Lastpage

220

Abstract

A new parameter extraction methodology based on split C-V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C-V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝ Qi^-2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows reliable MOSFET parameter extraction.

Keywords

CMOS integrated circuits; MOSFET; silicon-on-insulator; FDSOI CMOS technology; FDSOI MOS device; MOSFET parameter extraction method; Maserjian function; capacitance model; gate oxide thickness; split C-V measurement; Capacitance; Capacitance-voltage characteristics; Logic gates; MOSFETs; Parameter extraction; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343372

Filename

6343372