DocumentCode :
2013132
Title :
Tunable Electromechanical resonator based on Carbon Nanotube Array Suspended Gate Field Effect Transistor (CNT-SGFET)
Author :
Arun, A. ; Goffman, M.F. ; Grogg, D. ; Filoramo, A. ; Campidelli, S. ; Derycke, V. ; Idda, T. ; Salet, P. ; Ionescu, A.M.
Author_Institution :
NanoLab, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
112
Lastpage :
115
Abstract :
In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.
Keywords :
carbon nanotubes; electrophoresis; field effect transistors; micromechanical resonators; silicon; CNT-SGFET; ac-dielectrophoresis technique; carbon nanotube array; equivalent electrical model; frequency 120 MHz; gate electrode; microelectromechanical resonator; silicon based FET; single-walled CNT; suspended gate field effect transistor; tunable electromechanical resonator; Biomembranes; CMOS technology; Carbon nanotubes; Electrodes; FETs; Fabrication; Lithography; Optical buffering; Resonance; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442552
Filename :
5442552
Link To Document :
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