Tunable Electromechanical resonator based on Carbon Nanotube Array Suspended Gate Field Effect Transistor (CNT-SGFET)

Author

Arun, A. ; Goffman, M.F. ; Grogg, D. ; Filoramo, A. ; Campidelli, S. ; Derycke, V. ; Idda, T. ; Salet, P. ; Ionescu, A.M.

Author_Institution

NanoLab, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2010

fDate

24-28 Jan. 2010

Firstpage

112

Lastpage

115

Abstract

In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.

Keywords

carbon nanotubes; electrophoresis; field effect transistors; micromechanical resonators; silicon; CNT-SGFET; ac-dielectrophoresis technique; carbon nanotube array; equivalent electrical model; frequency 120 MHz; gate electrode; microelectromechanical resonator; silicon based FET; single-walled CNT; suspended gate field effect transistor; tunable electromechanical resonator; Biomembranes; CMOS technology; Carbon nanotubes; Electrodes; FETs; Fabrication; Lithography; Optical buffering; Resonance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Conference_Location

Wanchai, Hong Kong

ISSN

1084-6999

Print_ISBN

978-1-4244-5761-8

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2010.5442552

Filename

5442552