DocumentCode :
2013187
Title :
Charge-drift elimination in resonant electrostatic MEMS
Author :
Bahl, Gaurav ; Salvia, James ; Bargatin, Igor ; Yoneoka, Shingo ; Melamud, Renata ; Kim, Bongsang ; Chandorkar, Saurabh ; Hopcroft, Matthew A. ; Bahl, Rajendar ; Howe, Roger T. ; Kenny, Thomas W.
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
108
Lastpage :
111
Abstract :
We present a biasing technique and a novel oscillator architecture for the elimination of frequency drifts in resonant electrostatic MEMS that are caused by the motion of charge present within dielectrics. We demonstrate more than two orders of magnitude improvement in stability for a test device operating as a frequency reference at 1.077 MHz, reducing frequency drift from more than 100 Hz over 3 hours using traditional actuation, down to less than 1.5 Hz variation over 40 hours using the new technique.
Keywords :
dielectric materials; electrostatics; micromechanical devices; oscillators; resonance; biasing technique; charge drift elimination; frequency 1.077 MHz; frequency drift elimination; oscillator architecture; resonant electrostatic MEMS; time 3 hr; Dielectrics; Electrostatics; Micromechanical devices; Oscillators; Polarization; Resonance; Resonant frequency; Silicon; Stability; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442555
Filename :
5442555
Link To Document :
بازگشت