Charge-drift elimination in resonant electrostatic MEMS

Author

Bahl, Gaurav ; Salvia, James ; Bargatin, Igor ; Yoneoka, Shingo ; Melamud, Renata ; Kim, Bongsang ; Chandorkar, Saurabh ; Hopcroft, Matthew A. ; Bahl, Rajendar ; Howe, Roger T. ; Kenny, Thomas W.

Author_Institution

Stanford Univ., Stanford, CA, USA

fYear

2010

fDate

24-28 Jan. 2010

Firstpage

108

Lastpage

111

Abstract

We present a biasing technique and a novel oscillator architecture for the elimination of frequency drifts in resonant electrostatic MEMS that are caused by the motion of charge present within dielectrics. We demonstrate more than two orders of magnitude improvement in stability for a test device operating as a frequency reference at 1.077 MHz, reducing frequency drift from more than 100 Hz over 3 hours using traditional actuation, down to less than 1.5 Hz variation over 40 hours using the new technique.

Keywords

dielectric materials; electrostatics; micromechanical devices; oscillators; resonance; biasing technique; charge drift elimination; frequency 1.077 MHz; frequency drift elimination; oscillator architecture; resonant electrostatic MEMS; time 3 hr; Dielectrics; Electrostatics; Micromechanical devices; Oscillators; Polarization; Resonance; Resonant frequency; Silicon; Stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Conference_Location

Wanchai, Hong Kong

ISSN

1084-6999

Print_ISBN

978-1-4244-5761-8

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2010.5442555

Filename

5442555