DocumentCode :
2013225
Title :
New Integration Technology for PbTe Element
Author :
Long, Chunquan ; Yan, Yong ; Zhang, Jianzhong ; Ren, Baoguo ; Wang, Zeshen
Author_Institution :
Tianjin Inst. of Power Sources
fYear :
2006
fDate :
6-10 Aug. 2006
Firstpage :
386
Lastpage :
389
Abstract :
The paper reports a new technology for integration of PbTe elements. In traditional procedure, the first step is to prepare PbTe materials, then to bond them together with electrodes. We press the PbTe powder together with the powder of electrode and buffer materials by powder metallurgy after PbTe alloy was prepared, and obtain the elements directly. The paper described the technical process in detail. The authors prepared some samples of N-type PbTe elements using the technology. The electrode, buffer, PbTe material and their interfaces of the prepared samples are characterized by SEM and ED. The contact resistances have been measured and compared with the sample prepared by traditional technology. The results indicate that the proposed technology is easy, economic and feasible. It may simplify preparation process of PbTe elements, reduce the times PbTe materials suffered at high temperature and decrease the contact resistance
Keywords :
IV-VI semiconductors; contact resistance; electrodes; electron diffraction; lead compounds; narrow band gap semiconductors; powder metallurgy; pressing; scanning electron microscopy; ED analysis; PbTe; SEM analysis; contact resistances; electrodes; element integration; powder metallurgy; pressing; Bonding; Contact resistance; Electrodes; Furnaces; Leg; Nickel; Paper technology; Powders; Temperature; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
ISSN :
1094-2734
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
Type :
conf
DOI :
10.1109/ICT.2006.331278
Filename :
4133311
Link To Document :
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