DocumentCode
2013405
Title
Flash EEPROM Cell scaling based on tunnel oxide thinning limitations
Author
Yosbikawa, K. ; Mori, S. ; Sakagami, E. ; Arai, N. ; Kaneko, Y. ; Ohshima, Y.
Author_Institution
Toshiba Microelectronics Corporation, Japan
fYear
1991
fDate
28-30 May 1991
Firstpage
79
Lastpage
80
Keywords
Degradation; EMP radiation effects; EPROM; Insulation; Laboratories; Leakage current; Magnetooptic recording; Microelectronics; Semiconductor devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.705999
Filename
705999
Link To Document