Title :
Inductively coupled plasma etching with supplementary electron beam injection
Author :
Hoshinuya, K. ; Ravi, Reshma ; Zengqi Yu ; Richardson, Chuck ; Collins, G.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Summary form only given, as follows. Plasma etching is widely used in patterning semiconductor and the other materials The etching is stimulated by a flux of ions but charging effects occur. A cold cathode generated electron beam has already shown its charge neutralization performance on etch surfaces in the reactive ion etching.
Keywords :
electron beams; particle beam injection; sputter etching; charge neutralization performance; charging effects; cold cathode generated electron beam; etch surfaces; inductively coupled plasma etching; patterning semiconductor; reactive ion etching; supplementary electron beam injection; Electrodes; Electron beams; Etching; Optical coupling; Particle beam injection; Particle beams; Plasma applications; Plasma sheaths;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228708