Title :
Site- and energy-controlled quantum dots for photonic applications
Author_Institution :
Lab. of Phys. Nanostructures, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
This paper reviews the application of growth on nonplanar, patterned substrates for producing high quality semiconductor quantum dots (QDs) with good control over their position on the substrate as well as their energy spectrum. The approach consists of organometallic chemical vapor deposition (OMCVD) of (In)GaAs/(Al)GaAs heterostructures on (111)B GaAs substrates patterned with pyramidal pits. The perfect site-control of the pyramidal quantum dots are useful for incorporation into optically active photonic crystal devices. The incorporation of pyramidal QDs into Bragg optical cavities as well as their use in efficient QD lasers are also discussed.
Keywords :
MOCVD; photonic crystals; quantum dot lasers; semiconductor growth; semiconductor quantum dots; (In)GaAs/(Al)GaAs heterostructures; Bragg optical cavities; GaAs; GaAs substrates; InGaAs-AlGaAs; energy spectrum; energy-controlled quantum dots; nonplanar substrates; optically active photonic crystal devices; organometallic chemical vapor deposition; patterned substrates; photonic applications; pyramidal quantum dots; pyramidal slits; quantum dot lasers; semiconductor quantum dots; site-controlled quantum dots; Carrier confinement; Charge carriers; Excitons; Light emitting diodes; Photonic crystals; Quantum dots; Stimulated emission; Substrates; Temperature measurement; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363113