• DocumentCode
    2013516
  • Title

    Study of dark counts in Geiger mode In0.53Ga0.47As/In0.52Al0.48As SACM APDs

  • Author

    Karve, Gauri ; Wang, Shuhui ; Ma, Fa-Jun ; Li, Xin ; Campbell, Joe C. ; Bethune, Donald S. ; Risk, William P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    72
  • Abstract
    This study demonstrates 1.52 μm Geiger mode operation of an In0.53Ga0.47As/In0.52Al0.48As APD. A study of the origin of dark count rate in this detector is also presented.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 1.52 mum; Geiger mode; In0.53Ga0.47As-In0.52Al0.48As; SACM APD; dark counts; photon counting detector; separate-absorption-charge multiplication; Avalanche photodiodes; Breakdown voltage; Electric breakdown; Indium gallium arsenide; Indium phosphide; Optical noise; Photonic band gap; Probability; Temperature dependence; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363116
  • Filename
    1363116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013516