DocumentCode
2013521
Title
The study for photo-thermoelectric effect of Si-Ge-Au amorphous thin films as non-cooled type photo sensor
Author
Okamoto, Y. ; Fukui, K. ; Fujii, K. ; Suenaga, T. ; Morimoto, J.
Author_Institution
Dept. of Mater. Sci. & Eng., National Defense Acad., Yokosuka
fYear
2006
fDate
6-10 Aug. 2006
Firstpage
426
Lastpage
430
Abstract
We have examined the feasibility for photo sensor application of Si-Ge-Au amorphous thin films. It is clarified the optimum sample preparation condition for photo sensor application. Photo sensing properties of optimum prepared samples were measured. As a result, specific sensitivity reached up to 0.019 V/W as row material. This value means that Si-Ge-Au amorphous thin film is powerful candidate for primary material of photo-thermoelectric type photo sensor
Keywords
amorphous semiconductors; germanium compounds; gold compounds; photodetectors; photoelectricity; photothermal effects; semiconductor thin films; silicon compounds; thermoelectricity; Si-Ge-Au; amorphous thin films; photo sensor; photo-thermoelectric effect; Amorphous materials; Chemical analysis; Electromagnetic wave absorption; Infrared sensors; Temperature sensors; Thermal conductivity; Thermal sensors; Thermoelectricity; Thin film sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location
Vienna
ISSN
1094-2734
Print_ISBN
1-4244-0811-3
Electronic_ISBN
1094-2734
Type
conf
DOI
10.1109/ICT.2006.331306
Filename
4133321
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