Title :
Breakdown characteristics of In0.52Al0.48As-InP heterojunction APDs
Author :
Kwon, Oh-Hyun ; Grine, Aalejandro ; Haji, Aalim ; Hayat, Majeed M. ; Campbell, Joe C. ; Saleh, Bahaa E A ; Teich, Mavlin C.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Abstract :
This paper describes the breakdown characteristics of In0.52Al0.48As-InP heterojunction APDs. This work also calculates the breakdown characteristics triggered by dark counts resulting from thermal generation or trapped carriers in the multiplication region. Finally, an attempt is done to further improve the breakdown probabilities by considering multistage heterojunction APDs.
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; indium compounds; probability; semiconductor device models; semiconductor heterojunctions; In0.52Al0.48As-InP; breakdown characteristics; breakdown probabilities; dark counts; heterojunction APD; multiplication region; multistage APD; thermal generation; trapped carriers; Analytical models; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Electric breakdown; Heterojunctions; Impact ionization; Indium phosphide; Photonic band gap;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363118
