• DocumentCode
    2013554
  • Title

    Breakdown characteristics of In0.52Al0.48As-InP heterojunction APDs

  • Author

    Kwon, Oh-Hyun ; Grine, Aalejandro ; Haji, Aalim ; Hayat, Majeed M. ; Campbell, Joe C. ; Saleh, Bahaa E A ; Teich, Mavlin C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    76
  • Abstract
    This paper describes the breakdown characteristics of In0.52Al0.48As-InP heterojunction APDs. This work also calculates the breakdown characteristics triggered by dark counts resulting from thermal generation or trapped carriers in the multiplication region. Finally, an attempt is done to further improve the breakdown probabilities by considering multistage heterojunction APDs.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; indium compounds; probability; semiconductor device models; semiconductor heterojunctions; In0.52Al0.48As-InP; breakdown characteristics; breakdown probabilities; dark counts; heterojunction APD; multiplication region; multistage APD; thermal generation; trapped carriers; Analytical models; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Electric breakdown; Heterojunctions; Impact ionization; Indium phosphide; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363118
  • Filename
    1363118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013554