Title :
Transport properties of strained silicon nanowires
Author :
Niquet, Yann-Michel ; Delerue, Christophe ; Nguyen, Viet Hung ; Krzeminski, Christophe ; Triozon, François
Author_Institution :
SP2M, UJF-Grenoble 1, Grenoble, France
Abstract :
We discuss the effect of strains on the electron and hole mobilities in silicon nanowires with diameters near 10 nm. We show that silicon nanowires are very sensitive to strains, so that strain engineering shall be a highly efficient booster for nanowire technologies.
Keywords :
electron mobility; elemental semiconductors; hole mobility; nanowires; silicon; Si; electron mobility; hole mobility; nanowire technology; strain engineering; strained silicon nanowire; transport property; Electron mobility; Nanowires; Silicon; Strain; Transistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343390
