Title :
Silicon-on-insulator technology impacts on SRAM testing
Author :
Adams, R. Dean ; Shephard, Phil, III
Author_Institution :
Int. Bus. Machines, Essex Junction, VT, USA
Abstract :
Silicon-on-insulator (SOI) SRAMs have different characteristics from those fabricated in traditional bulk silicon. Fault models and sensitivities must be considered when testing for SOI manufacturing defects. Circuit details of SOI SRAMs that relate to testing are presented and a new pattern is described which covers the related fault models
Keywords :
SRAM chips; fault simulation; integrated circuit testing; production testing; silicon-on-insulator; SRAM testing; fault models; manufacturing defects; sensitivities; silicon-on-insulator technology; Decision support systems; FETs; Random access memory; Silicon on insulator technology; Testing;
Conference_Titel :
VLSI Test Symposium, 2000. Proceedings. 18th IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7695-0613-5
DOI :
10.1109/VTEST.2000.843825
