Title :
High temperature behaviour of GaN-on-Si high power MISHEMT devices
Author :
Wellekens, Dirk ; Venegas, Rafael ; Kang, Xuanwu ; Zahid, Mohammed ; Wu, Tian-Li ; Marcon, Denis ; Srivastava, Puneet ; Van Hove, Marleen ; Decoutere, Stefaan
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.
Keywords :
MIS devices; dielectric properties; gallium compounds; power HEMT; semiconductor device reliability; thermal stability; GaN; VDMOS device; bilayer gate dielectric; high power MISHEMT devices; high temperature behaviour; reliability; switching behaviour; thermal stability; Gallium nitride; HEMTs; Logic gates; Stress; Temperature; Temperature measurement; Thermal stability;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343393
