Title :
Fermi surface and thermoelectric power of (Bi1-xSbx)2Te3 single crystals doped by Ag, Sn, Ga
Author :
Kulbachinskii, V.A. ; Kytin, A.V.G. ; Tarasov, P.M.
Author_Institution :
Dept. of Low Temp. Phys., Moscow State Univ.
Abstract :
The Fermi surface anisotropy of the upper valence band of p-(Bi 1-xSbx)2Te3 single crystals (0.25 ⩽ x ⩽ 1) was studied by analyzing the angular dependence of the frequency of SdH (SdH) oscillations in high magnetic fields up to 38 T and the effect of silver, tin and gallium doping on the thermoelectric power in these crystals. It was shown that silver in (Bi 1-xSbx)2Te3 mixed crystals acts as acceptor, while silver in Bi2Te3 is a donor. Tin also exhibits acceptor properties, but gallium is a donor. Both tin and silver doping of p-(Bi1-xSbx)2 Te3 mixed crystals decrease the Seebeck coefficient S due to an increase in the hole concentration p while gallium decreases p and increases S
Keywords :
Fermi surface; Seebeck effect; Shubnikov-de Haas effect; bismuth compounds; gallium; hole density; semiconductor doping; semiconductor materials; silver; thermoelectric power; tin; valence bands; (BiSb)2Te3:Ag; (BiSb)2Te3:Ga; (BiSb)2Te3:Sn; Fermi surface; Seebeck coefficient; doping; hole concentration; single crystals; thermoelectric power; valence band; Anisotropic magnetoresistance; Bismuth; Crystals; Doping; Frequency; Magnetic analysis; Silver; Tellurium; Thermoelectricity; Tin;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0810-5
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331314
