DocumentCode
2013730
Title
Deterministic simulation of 3D and quasi-2D electron and hole systems in SiGe devices
Author
Jungemann, C. ; Anh-Tuan Pham ; Sung-Min Hong ; Meinerzhagen, B.
Author_Institution
Dept. of Electromagn. Theor., RWTH Aachen Univ., Aachen, Germany
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
318
Lastpage
321
Abstract
We present examples of deterministic solvers for the Boltzmann transport equation for electrons and holes in a 3D and quasi 2D fc-space. Compared to the standard approach, the Monte Carlo method, these deterministic solvers have certain advantages. They yield exact stationary solutions, which, for example, are required for the simulation of the floating body effect in SOI devices. They allow exact small-signal and noise analysis in the whole range of frequencies from 0 to THz. Inclusion of magnetic fields, the Pauli principle or rare events causes no problems. On the other hand, the deterministic solvers are more memory intensive and more difficult to code than the Monte Carlo method.
Keywords
Boltzmann equation; Ge-Si alloys; Monte Carlo methods; Poisson equation; electron transport theory; semiconductor device models; silicon-on-insulator; 3D electron; Boltzmann transport equation; Monte Carlo method; Pauli principle; SOI devices; SiGe; deterministic simulation; deterministic solvers; floating body effect; hole systems; magnetic fields; memory intensive; noise analysis; quasi-2D electron; rare events; small-signal analysis; stationary solutions; Boltzmann equation; Harmonic analysis; Mathematical model; Monte Carlo methods; Noise; Numerical models; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343397
Filename
6343397
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