Title :
Preparation of p-type materials thin-film by using buffer layer
Author :
Flahaut, D. ; Mihara, T. ; Funahashi, R.
Author_Institution :
AIST, Osaka
Abstract :
c-axis oriented Ca2.7Bi0.3Co4O 9 thin films have been grown on glass substrate. Deposition with a buffer-layer has also been attempted. Two orientations of the CeO 2 buffer layer can be obtained, (111) and (100) depending on deposition conditions. 349 phase is well grown on the buffer layer but no peaks are detected on X-Ray patterns. T Seebeck coefficient of the 349 phase reaches -60muV.K-1 but the resistivity remains high
Keywords :
Seebeck effect; buffer layers; calcium compounds; cerium compounds; crystal orientation; electrical resistivity; pulsed laser deposition; Ca2.7Bi0.3Co4O9; CeO2; Seebeck coefficient; X-Ray patterns; buffer layer; deposition; electrical resistivity; p-type semiconductor; semiconductor thin films; Buffer layers; Conducting materials; Electrons; Glass; Powders; Pulsed laser deposition; Substrates; Temperature; Thermoelectricity; Transistors;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331315
