Title :
Investigation of the Magnesium Silicide -- Mg2Si Films
Author :
Kamilov, T.S. ; Kabilov, D.K. ; Kamilova, R.Kh. ; Azimov, M.E. ; Klechkovskaya, V.V. ; Orekhov, A.S. ; Suvorova, E.I.
Author_Institution :
Tashkent State Aviation Inst.
Abstract :
The silicides are ecologically friendly materials and they have a mechanical stability to corrosion, oxidation, decay and aggressive environments. It is known that a bulk magnesium silicide - Mg2Si demonstrates semiconductor conductivity n-type character with energy band gap Eg=0.78 eV and solid solution based on the Mg2Si-Mg2Sn have figure of merit of ZT>1 [Samsonov, et. al. 1979]. Only small part of articles has devoted to thin Mg2Si films on silicon. In this work the magnesium silicide films have been grown on silicon substrate by reactive diffusion method and their thermoelectric properties were investigated
Keywords :
diffusion; electrical conductivity; energy gap; magnesium compounds; semiconductor thin films; thermoelectricity; Mg2Si; Si; corrosion resistance; decay resistance; energy band gap; magnesium silicide films; merit figure; oxidation resistance; reactive diffusion method; semiconductor thin films; solid solutions; thermoelectricity; Conducting materials; Conductivity; Corrosion; Magnesium compounds; Oxidation; Semiconductor films; Semiconductor materials; Silicides; Silicon; Stability;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0810-5
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331316
