A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs

This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si_(1-x)Ge_x active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.