Title :
Electron transport in germanium junctionless nanowire transistors
Author :
Razavi, Pedram ; Fagas, Giorgos ; Ferain, Isabelle ; Yu, Ran ; Das, Samaresh
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
The impact of channel dimension and crystallographic orientations on ballistic transport of germanium junctionless nanowire transistors is investigated using 3D quantum-mechanical simulations and is compared with those of the inversion-mode nanowire transistors. Analysis of the contribution of source-to-drain tunneling to the off-current shows suppressed direct tunneling in the junctionless design compared to the inversion mode devices.
Keywords :
ballistic transport; crystallography; germanium; nanowires; semiconductor device models; transistors; 3D quantum-mechanical simulation; Ge; ballistic transport; channel dimension; crystallographic orientation; direct tunneling; electron transport; germanium junctionless nanowire transistor; inversion mode device; inversion-mode nanowire transistor; source-to-drain tunneling; Effective mass; Logic gates; Mathematical model; Silicon; Solid modeling; Transistors; Tunneling;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343399
