DocumentCode
2013780
Title
Electron transport in germanium junctionless nanowire transistors
Author
Razavi, Pedram ; Fagas, Giorgos ; Ferain, Isabelle ; Yu, Ran ; Das, Samaresh
Author_Institution
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
326
Lastpage
329
Abstract
The impact of channel dimension and crystallographic orientations on ballistic transport of germanium junctionless nanowire transistors is investigated using 3D quantum-mechanical simulations and is compared with those of the inversion-mode nanowire transistors. Analysis of the contribution of source-to-drain tunneling to the off-current shows suppressed direct tunneling in the junctionless design compared to the inversion mode devices.
Keywords
ballistic transport; crystallography; germanium; nanowires; semiconductor device models; transistors; 3D quantum-mechanical simulation; Ge; ballistic transport; channel dimension; crystallographic orientation; direct tunneling; electron transport; germanium junctionless nanowire transistor; inversion mode device; inversion-mode nanowire transistor; source-to-drain tunneling; Effective mass; Logic gates; Mathematical model; Silicon; Solid modeling; Transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343399
Filename
6343399
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