Title :
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
Author :
Romeo, T. ; Pantisano, L. ; Simoen, E. ; Krom, R. ; Togo, M. ; Horiguchi, N. ; Mitard, J. ; Thean, A. ; Groeseneken, G. ; Claeys, C. ; Crupi, F.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
This paper discusses the low-frequency noise behavior of SiGe-channel bulk FinFETs processed on (100) and (110) Si wafers. A comparison is also made with planar SiGe-channel pMOSFETs. It is shown that for devices with carriers confined in the quantum well, only 1/f noise is observed, dominated by mobility fluctuations. Surprisingly, SiGe pMOSFETs fabricated on (110) Si wafers exhibit the highest mobility but also the highest 1/f noise, corresponding with trapping/detrapping. This is also consistent with the density of interface traps extracted from charge pumping measurements.
Keywords :
MOSFET; charge pump circuits; channel bulk FinFET; charge pumping measurements; low-frequency noise assessment; pMOSFET; transport mechanisms; FinFETs; Fluctuations; Low-frequency noise; Silicon; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343400
