DocumentCode

2013807

Title

A Fully Planarized 0.25 /spl mu/m CMOS Technology

Author

Wen, D.S. ; Chang, W.H. ; Lii, Y. ; Megdanis, A.C. ; McFarland, P. ; Bronner, G.B.

Author_Institution

IBM T.J. Watson Research Center, New York

fYear

1991

fDate

28-30 May 1991

Firstpage

83

Lastpage

84

Keywords

CMOS technology; Capacitance; Etching; FETs; MOSFETs; Oxidation; Planarization; Rapid thermal processing; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

conf

DOI

10.1109/VLSIT.1991.706001

Filename

706001