Title :
A Fully Planarized 0.25 /spl mu/m CMOS Technology
Author :
Wen, D.S. ; Chang, W.H. ; Lii, Y. ; Megdanis, A.C. ; McFarland, P. ; Bronner, G.B.
Author_Institution :
IBM T.J. Watson Research Center, New York
Keywords :
CMOS technology; Capacitance; Etching; FETs; MOSFETs; Oxidation; Planarization; Rapid thermal processing; Silicon; Substrates;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706001
