• DocumentCode
    2013808
  • Title

    Can mems take advantage of advances in semiconductor lithography?

  • Author

    Lin, Burn J.

  • Author_Institution
    TSMC, Ltd., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    24-28 Jan. 2010
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Progress of lithography has helped to spearhead the semiconductor industry to follow Moore´s law to sustain improvement of performance and reduction of cost for decades. The MEMS industry, having started later and being less developed in economy of scale, can take advantage of the experience of semiconductor patterning to make MEMS patterning cheaper and faster. In this paper, possible better paths of lithography progression are proposed. Some semiconductor methods and some MEMS-specific methods to extend the depth of focus are covered. The multi-beam maskless system is examined for its suitability for MEMS to remove the difficulties of existing lithography systems for MEMS.
  • Keywords
    economies of scale; lithography; micromechanical devices; semiconductor industry; MEMS industry; MEMS patterning; MEMS-specific methods; Moores law; depth of focus; economy of scale; lithography progression; lithography systems; multibeam maskless system; semiconductor industry; semiconductor lithography; semiconductor methods; semiconductor patterning; Costs; Economies of scale; Electronics industry; Equations; Image resolution; Lithography; Micromechanical devices; Moore´s Law; Nanoelectromechanical systems; Printing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
  • Conference_Location
    Wanchai, Hong Kong
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-5761-8
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2010.5442578
  • Filename
    5442578