DocumentCode
2013808
Title
Can mems take advantage of advances in semiconductor lithography?
Author
Lin, Burn J.
Author_Institution
TSMC, Ltd., Hsinchu, Taiwan
fYear
2010
fDate
24-28 Jan. 2010
Firstpage
1
Lastpage
10
Abstract
Progress of lithography has helped to spearhead the semiconductor industry to follow Moore´s law to sustain improvement of performance and reduction of cost for decades. The MEMS industry, having started later and being less developed in economy of scale, can take advantage of the experience of semiconductor patterning to make MEMS patterning cheaper and faster. In this paper, possible better paths of lithography progression are proposed. Some semiconductor methods and some MEMS-specific methods to extend the depth of focus are covered. The multi-beam maskless system is examined for its suitability for MEMS to remove the difficulties of existing lithography systems for MEMS.
Keywords
economies of scale; lithography; micromechanical devices; semiconductor industry; MEMS industry; MEMS patterning; MEMS-specific methods; Moores law; depth of focus; economy of scale; lithography progression; lithography systems; multibeam maskless system; semiconductor industry; semiconductor lithography; semiconductor methods; semiconductor patterning; Costs; Economies of scale; Electronics industry; Equations; Image resolution; Lithography; Micromechanical devices; Moore´s Law; Nanoelectromechanical systems; Printing;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location
Wanchai, Hong Kong
ISSN
1084-6999
Print_ISBN
978-1-4244-5761-8
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2010.5442578
Filename
5442578
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