DocumentCode :
2013808
Title :
Can mems take advantage of advances in semiconductor lithography?
Author :
Lin, Burn J.
Author_Institution :
TSMC, Ltd., Hsinchu, Taiwan
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
1
Lastpage :
10
Abstract :
Progress of lithography has helped to spearhead the semiconductor industry to follow Moore´s law to sustain improvement of performance and reduction of cost for decades. The MEMS industry, having started later and being less developed in economy of scale, can take advantage of the experience of semiconductor patterning to make MEMS patterning cheaper and faster. In this paper, possible better paths of lithography progression are proposed. Some semiconductor methods and some MEMS-specific methods to extend the depth of focus are covered. The multi-beam maskless system is examined for its suitability for MEMS to remove the difficulties of existing lithography systems for MEMS.
Keywords :
economies of scale; lithography; micromechanical devices; semiconductor industry; MEMS industry; MEMS patterning; MEMS-specific methods; Moores law; depth of focus; economy of scale; lithography progression; lithography systems; multibeam maskless system; semiconductor industry; semiconductor lithography; semiconductor methods; semiconductor patterning; Costs; Economies of scale; Electronics industry; Equations; Image resolution; Lithography; Micromechanical devices; Moore´s Law; Nanoelectromechanical systems; Printing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442578
Filename :
5442578
Link To Document :
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