DocumentCode :
2013829
Title :
The design of magnetoresistive devices
Author :
Everitt, B.A.
Author_Institution :
Nonvolatile Electron. Inc., Eden Prairie, MN, USA
Volume :
1
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
119
Abstract :
Magnetoresistive materials exhibiting either the conventional anisotropic magnetoresistance (AMR) effect or the giant magnetoresistance (GMR) effect are used in many applications including magnetic field sensing and nonvolatile random access memory. Several types of materials exhibit the GMR effect including multilayers, sandwich material, single- and double spin valves, and granular materials. Properties of the different types of MR materials are compared, and typical field sensing strategies are discussed. New materials exhibiting the spin dependent tunneling (SDT) and colossal magnetoresistance (CMR) effects may be used in the next generation of magnetic devices
Keywords :
giant magnetoresistance; magnetic anisotropy; magnetic multilayers; magnetic sensors; magnetoresistive devices; random-access storage; anisotropic magnetoresistance; colossal magnetoresistance; field sensing strategies; giant magnetoresistance; granular materials; magnetic field sensing; magnetoresistive devices; multilayers; nonvolatile random access memory; sandwich material; spin dependent tunneling; spin valves; Anisotropic magnetoresistance; Colossal magnetoresistance; Giant magnetoresistance; Magnetic materials; Magnetic multilayers; Magnetic tunneling; Magnetoresistive devices; Nonvolatile memory; Random access memory; Spin valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
Type :
conf
DOI :
10.1109/MWSCAS.1996.594051
Filename :
594051
Link To Document :
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