Title :
Noise margins of threshold logic gates containing resonant tunneling diodes
Author :
Bhattacharya, M. ; Mazumder, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Threshold gates consisting of RTDs in conjunction, with HBTs or CHFETs or MOS transistors can form extremely compact, ultrafast, digital logic alternatives. The resonant tunneling phenomenon causes these circuits to exhibit super-high-speed switching capabilities. Additionally, by virtue of being threshold logic gates, they are guaranteed to be more compact than traditional digital logic circuits while achieving the same functionality. However, reliable logic design with these gates will need a thorough understanding of their noise performance and power dissipation among other things. In this paper, we present an analytical study of the noise performance of these threshold gates supplemented by computer simulation results, with the objective of obtaining reliable circuit design guidelines
Keywords :
bipolar logic circuits; heterojunction bipolar transistors; integrated circuit noise; logic gates; nanotechnology; resonant tunnelling diodes; threshold logic; CHFETs; HBTs; MOS transistors; circuit design guidelines; digital logic; functionality; noise performance; power dissipation; resonant tunneling diodes; super-high-speed switching capabilities; threshold logic gates; Circuit noise; Logic circuits; Logic design; Logic gates; MOSFETs; Power dissipation; RLC circuits; Resonance; Resonant tunneling devices; Switching circuits;
Conference_Titel :
VLSI, 1998. Proceedings of the 8th Great Lakes Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-8186-8409-7
DOI :
10.1109/GLSV.1998.665201
