Characteristic of ITO and MgO surfaces after pin-to-plate type atmospheric plasma treatment using CDA

Author

Jeong, C.H. ; Yi, C.H. ; Park, Bong Joo ; Yeom, G.Y.

Author_Institution

Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

228

Abstract

Summary form only given, as follows. Recent studies on the surface treatment of various materials are concentrated on the atmospheric pressure by using He/O/sub 2/ plasma instead of low pressure plasmas due to the various advantages of atmospheric pressure plasma. In this study, pin-to-plate type atmospheric pressure plasmas were generated using clean dry air (CDA) by low frequency (kHz) power supply between dielectric covered electrodes and were used to remove contamination on the ITO and MgO surfaces and to investigate the change of surface composition and the surface roughness of ITO and MgO after the atmospheric pressure plasma treatment.

Keywords

indium compounds; magnesium compounds; plasma materials processing; semiconductor materials; surface composition; surface contamination; surface topography; surface treatment; 1 atm; He-O/sub 2/; ITO; InSnO; MgO; atmospheric pressure; clean dry air; contamination removal; pin-to-plate type atmospheric plasma treatment; surface composition; surface roughness; surface treatment; Atmospheric-pressure plasmas; Helium; Indium tin oxide; Plasma materials processing; Plasma properties; Rough surfaces; Surface cleaning; Surface contamination; Surface roughness; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228731

Filename

1228731