Title :
Hot-wire CVD grown microcrystalline silicon films with and without initial growing layer modification by inductive coupled plasma
Author :
Kim, Dong Yeong ; Moon, Seung Il ; Seo, C.K. ; Yi, J.S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Sung Kyun Kwan Univ., Suwon, South Korea
Abstract :
Summary form only given, as follows. Microcrystalline Si (pc-Si) films have been deposited by using five W wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with and without modification of initial growing layer by using a inductive coupled plasma system.
Keywords :
elemental semiconductors; plasma CVD; semiconductor growth; silicon; 0.5 mm; HWCVD; Si; hot-wire CVD grown microcrystalline films; hot-wire chemical vapor deposition; inductive coupled plasma; inductive coupled plasma system; initial growing layer modification; Plasmas; Semiconductor films; Silicon; Surface treatment;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228734
