Multinomial Memristor Model for Simulations and Analysis

In this paper, we propose a novel memristor model with multinomial window function. The model describes the range of behaviours that a fabricated device can exhibit especially with respect to state transition behaviour with desired non-linear memristor characteristics. This multinomial window function can be obtained by fitting the measured data of a practical memristor device. Because the window function fits the measured data directly, the multinomial memristor model characterizes a real memristor.