Title :
27.12MHz GaN Bi-directional resonant power converter
Author :
Gu, Lei ; Liang, Wei ; Raymond, Luke C. ; Rivas-Davila, Juan
Author_Institution :
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Abstract :
Resonant dc-dc converter regularly use Schottky diodes for high frequency rectification. Si Schottky diodes have relatively low voltage ratings and present reverse-recovery type losses when driven hard enough. SiC Schottky diodes can operate at high frequencies, but incur higher conduction losses. This paper presents a bidirectional dc-dc resonant converter having two ground referenced switches. The prototype converter delivers 400 W between a source of 170 V and a load of 50 V while delivering 250 W in the opposite direction. The converter presented herein can potentially be used in applications such as wireless power transfer, fuel cell and battery applications, bus converters, etc.
Keywords :
DC-DC power converters; Inverters; Logic gates; Prototypes; Resistance; Schottky diodes; Switching frequency;
Conference_Titel :
Control and Modeling for Power Electronics (COMPEL), 2015 IEEE 16th Workshop on
Conference_Location :
Vancouver, BC, Canada
DOI :
10.1109/COMPEL.2015.7236440