Title :
New Transistor Structure Optimization for 0.25/spl mu/m Cmos Technology
Author :
Kang, L.G. ; Kang, Y.T. ; Roh, B.H. ; Kim, S.P. ; Ha, Y.W. ; Han, K.M. ; Hwang, C.G.
Author_Institution :
R & D Center, Samsung Electronics, Korea
Keywords :
Boron; CMOS process; CMOS technology; CMOSFETs; Digital signal processing; Implants; MOS devices; Space technology; Transistors; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706002