DocumentCode :
2014128
Title :
The impact of the automotive environment on power semiconductors
Author :
Frank, Rand ; Valentine, Richard
Author_Institution :
Motorola Semiconductor Products Sector, Phoenix, AZ, USA
fYear :
1989
fDate :
28-29 Aug 1989
Firstpage :
84
Lastpage :
88
Abstract :
The authors discuss: (1) the increased use of power semiconductors (specifically power MOSFETs) in automotive applications; (2) environmental factors that have an impact on device cost; (3) changes that should be made to vehicles to reduce component and system cost; and (4) recent power semiconductor developments that increase the chances of survival in the harsh automotive environment. Basic power FET design, and system voltage variations and their impact on power FETs are also discussed
Keywords :
automotive electronics; insulated gate field effect transistors; power transistors; automotive applications; device cost; environmental factors; power MOSFET; power semiconductors; Automotive applications; Automotive engineering; Costs; Digital signal processing; FETs; MOSFETs; Microprocessors; Power transistors; Semiconductor diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Automotive Power Electronics, 1989
Conference_Location :
Dearborn, MI
Type :
conf
DOI :
10.1109/APE.1989.97161
Filename :
97161
Link To Document :
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