DocumentCode :
2014175
Title :
Millimeter-wave optoelectronic mixers based on InP HEMT
Author :
Choi, Chang-Soon ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
126
Abstract :
We investigate characteristics of InP HEMT optoelectronic mixers in 60 GHz band. They provide mixing function with high internal conversion gain over the wide LO frequency range. Utilizing them, 622 Mbps transmission is demonstrated in a fiber-supported 60 GHz wireless system.
Keywords :
high electron mobility transistors; indium compounds; integrated optoelectronics; microwave photonics; optical fibre communication; optical frequency conversion; 60 GHz; 622 Mbit/s; InP; InP HEMT; Millimeter-wave mixers; fiber-supported wireless system; high electron mobility transistors; high internal conversion gain; mixing function; optoelectronic mixers; Frequency conversion; HEMTs; Indium phosphide; Millimeter wave integrated circuits; Millimeter wave transistors; Mixers; Optical devices; Optical fiber devices; Optical mixing; Optical pumping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363143
Filename :
1363143
Link To Document :
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