Title :
Wide temperature (-20°C ∼ 100°) operation of an uncooled direct-modulation 1.3 μm InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications
Author :
Singh, H. ; Motoda, K. ; Mukaikubo, M. ; Okamoto, K. ; Washino, R. ; Sakuma, Y. ; Uchida, K. ; Yamamoto, H. ; Uomi, K. ; Nakahara, K. ; Aoki, M.
Author_Institution :
Opnext Japan, Inc., Japan
Abstract :
We report a wide temperature range (-20°C∼100°C), uncooled operation of a direct-modulation 1.3 μm, InGaAlAs MQW DFB laser diode with the highest-ever relaxation frequency (>20 GHz at 100°C) and high mask margin for 10.7 Gbit/s SONET applications.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; quantum well lasers; 1.3 mum; 10.7 Gbit/s; InGaAlAs MQW DFB laser; SONET; direct modulation; relaxation frequency; wide temperature range operation; Diode lasers; Forward error correction; Frequency; Laser modes; Quantum well devices; SONET; Semiconductor lasers; Temperature dependence; Temperature distribution; Transceivers;
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
DOI :
10.1109/OFC.2006.215768
