Title :
10 Gbit/s FP-TOSA and PIN-ROSA for 10GBASE-LRM application
Author :
Kurihara, Y. ; Kato, S. ; Arayama, T. ; Okuda, T. ; Ishikawa, S. ; Watanabe, I. ; Shimizu, J. ; Kobayashi, R. ; Tsuruoka, K.
Author_Institution :
1st Opt. Semicond. Dept., NEC Compound Semicond. Devices, Kanagawa, Japan
Abstract :
Wide temperature operating 10 Gbit/s 1.3 μm AlGaInAs FP-TOSA and InGaAs PIN-ROSA were newly developed for 10GBASE-LRM application. Error-free 330 m MMF transmission was successfully demonstrated using these components and EDC for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; 1.3 mum; 10 Gbit/s; 10GBASE-LRM; AlGaInAs; AlGaInAs FP-TOSA; InGaAs; InGaAs PIN-ROSA; MMF transmission; wide temperature operation; Design optimization; Laser modes; Optical coupling; Optical design; Optical devices; Optical receivers; Optical refraction; Optical transmitters; Optical variables control; Temperature;
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
DOI :
10.1109/OFC.2006.215769
