Title :
Dilute nitride lasers and photodetectors
Author :
Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Dilute nitride alloys are attractive candidates for lasers and detectors between 1.25 and 1.6 μm. We have demonstrated the first low-threshold continuous-wave 1.55 μ GaAs-based lasers and the first > 1.5 μm monolithic VCSELs using GaInNAsSb quantum wells as the active region and photodetectors based upon similar alloys.
Keywords :
gallium compounds; indium compounds; photodetectors; quantum well lasers; surface emitting lasers; wide band gap semiconductors; 1.25 to 1.6 mum; GaInNAsSb; GaInNAsSb quantum wells; VCSEL; dilute nitride lasers; dilute nitride photodetectors; Costs; Fiber lasers; Gallium arsenide; Photodetectors; Photonic band gap; Quantum well lasers; Semiconductor lasers; Spine; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
DOI :
10.1109/OFC.2006.215770
