DocumentCode :
2014306
Title :
Low-threshold CW 1.55-μm GaAs-based lasers
Author :
Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Goddard, L.L. ; Wistey, M.A. ; Sarmiento, T. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fYear :
2006
fDate :
5-10 March 2006
Abstract :
We demonstrate the first low-threshold continuous-wave (CW) 1.55-μm GaAs-based lasers. Using a single GaInNAsSb quantum well as the active region, edge-emitting lasers yielded CW thresholds as low as 579 A/cm2 (550 A/cm2 pulsed) and output powers > 100 mW.
Keywords :
III-V semiconductors; gallium arsenide; optical communication equipment; quantum well lasers; 1.55 mum; CW thresholds; GaAs-based lasers; GaInNAsSb; edge-emitting lasers; Gallium arsenide; Gold; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Plasma temperature; Power generation; Thermal management; Thermal resistance; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
Type :
conf
DOI :
10.1109/OFC.2006.215771
Filename :
1636802
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2014306
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