X-Band GaN-HEMT LNA performance versus robustness trade-off

Author

Bettidi, A. ; Corsaro, F. ; Cetronio, A. ; Nanni, A. ; Peroni, M. ; Romanini, P.

Author_Institution

SELEX Sist. Integrati SpA, Rome, Italy

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

439

Lastpage

442

Abstract

In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8-11 GHz frequency range a NF better than 2.5 dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium compounds; low noise amplifiers; wide band gap semiconductors; GaN; LNA MMIC; X-band GaN-HEMT LNA performance; frequency 8 GHz to 11 GHz; incident power failure mechanisms; microstrip GaN technology; on-wafer measurements; robustness trade-off; Fabrication; Frequency; Gain; Gallium nitride; MMICs; Microstrip components; Noise measurement; Robustness; Testing; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296018

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014381