Title :
X-Band GaN-HEMT LNA performance versus robustness trade-off
Author :
Bettidi, A. ; Corsaro, F. ; Cetronio, A. ; Nanni, A. ; Peroni, M. ; Romanini, P.
Author_Institution :
SELEX Sist. Integrati SpA, Rome, Italy
Abstract :
In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8-11 GHz frequency range a NF better than 2.5 dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium compounds; low noise amplifiers; wide band gap semiconductors; GaN; LNA MMIC; X-band GaN-HEMT LNA performance; frequency 8 GHz to 11 GHz; incident power failure mechanisms; microstrip GaN technology; on-wafer measurements; robustness trade-off; Fabrication; Frequency; Gain; Gallium nitride; MMICs; Microstrip components; Noise measurement; Robustness; Testing; Topology;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
