• DocumentCode
    2014386
  • Title

    Highly strained GaInAs/GaAs 1.21 μm vertical cavity surface emitting laser with single-mode output power of 3 mW

  • Author

    Kondo, Takashi ; Uchiyama, Yasuhiro ; Takeda, Kazutaka ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio

  • Author_Institution
    Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    142
  • Abstract
    A highly strained GaInAs/GaAs VCSEL emitting at 1.21 μm is demonstrated. The threshold current is 1.3 mA. The maximum single mode output power of 3 mW is achieved. These results indicate that a highly strained 1.2 μm range GaInAs VCSEL can be useful for high capacity metro-area networks.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser modes; optical communication equipment; surface emitting lasers; 1.21 mum; 1.3 mA; 3 W; GaInAs-GaAs; GaInAs/GaAs VCSEL; high capacity metro-area networks; highly strained VCSEL; single-mode output; vertical cavity surface emitting laser; Distributed Bragg reflectors; Gallium arsenide; Plasma temperature; Power generation; Power lasers; Quantum well lasers; RNA; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363151
  • Filename
    1363151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014386