Title :
Highly strained GaInAs/GaAs 1.21 μm vertical cavity surface emitting laser with single-mode output power of 3 mW
Author :
Kondo, Takashi ; Uchiyama, Yasuhiro ; Takeda, Kazutaka ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A highly strained GaInAs/GaAs VCSEL emitting at 1.21 μm is demonstrated. The threshold current is 1.3 mA. The maximum single mode output power of 3 mW is achieved. These results indicate that a highly strained 1.2 μm range GaInAs VCSEL can be useful for high capacity metro-area networks.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser modes; optical communication equipment; surface emitting lasers; 1.21 mum; 1.3 mA; 3 W; GaInAs-GaAs; GaInAs/GaAs VCSEL; high capacity metro-area networks; highly strained VCSEL; single-mode output; vertical cavity surface emitting laser; Distributed Bragg reflectors; Gallium arsenide; Plasma temperature; Power generation; Power lasers; Quantum well lasers; RNA; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363151
