Title :
Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 μm
Author :
Goddard, L.L. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We present 1.5 μm CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm2, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical communication equipment; semiconductor lasers; waveguide lasers; 1.5 mum; 20 degC; 200 mW; GaInNAsSb-GaAs; GaInNAsSb/GaAs lasers; Z-parameter measurements; continuous-wave lasers; reduced monomolecular recombination; room temperature threshold densities; waveguide lasers; Current density; Gallium arsenide; Gold; Indium tin oxide; Plasma temperature; Power generation; Power lasers; Radiative recombination; Solid lasers; Thermal resistance;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363152
