• DocumentCode
    2014404
  • Title

    Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 μm

  • Author

    Goddard, L.L. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    144
  • Abstract
    We present 1.5 μm CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm2, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.
  • Keywords
    III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical communication equipment; semiconductor lasers; waveguide lasers; 1.5 mum; 20 degC; 200 mW; GaInNAsSb-GaAs; GaInNAsSb/GaAs lasers; Z-parameter measurements; continuous-wave lasers; reduced monomolecular recombination; room temperature threshold densities; waveguide lasers; Current density; Gallium arsenide; Gold; Indium tin oxide; Plasma temperature; Power generation; Power lasers; Radiative recombination; Solid lasers; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363152
  • Filename
    1363152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014404