• DocumentCode
    2014425
  • Title

    Thermoelectric properties of Mn- and Co-doped Ã\x9f-FeSi2 single crystals

  • Author

    Ishida, Y. ; Kayamura, K. ; Takeda, M. ; Ohsugi, I.J.

  • Author_Institution
    Dept. of Mech. Eng., Nagaoka Univ. of Technol.
  • fYear
    2006
  • fDate
    6-10 Aug. 2006
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    Co-doped and Mn-doped beta-FeSi2 single crystals were grown by temperature gradient solution growth method using Ga as a solvent. Polyhedral shaped bulk crystals with well developed facets could be obtained. In particular, Co-doped single crystals which are large enough to measure the Seebeck coefficient along crystallographic axes were obtained. We determined the crystal orientation by Laue back reflection pattern, and measured the Seebeck coefficients of the Co-doped beta-FeSi2 along the three orthorhombic crystal axes. The Seebeck coefficient along the a-axis was somewhat lower than the others, while that of the previously reported non-doped beta-FeSi 2 was the highest among the three directions. In addition, the anisotropy of the Co-doped beta-FeSi2 was weaker compared with that of non-doped ones
  • Keywords
    Seebeck effect; X-ray crystallography; cobalt; crystal growth from solution; crystal orientation; iron compounds; manganese; semiconductor materials; silicon compounds; FeSi2:Co; FeSi2:Mn; Laue back reflection pattern; Seebeck coefficient; crystal orientation; temperature gradient solution growth method; thermoelectric property; Anisotropic magnetoresistance; Crystalline materials; Crystallography; Crystals; Iron; Reflection; Solvents; Temperature; Thermoelectric devices; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2006. ICT '06. 25th International Conference on
  • Conference_Location
    Vienna
  • ISSN
    1094-2734
  • Print_ISBN
    1-4244-0811-3
  • Electronic_ISBN
    1094-2734
  • Type

    conf

  • DOI
    10.1109/ICT.2006.331377
  • Filename
    4133356