Silicon based resonant cavity enhanced photodetectors for optical interconnects

Author

Emsley, Matthew K.

Author_Institution

Analog Devices, Inc., Wilmington, MA, USA

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

146

Abstract

This paper reviews efforts made in fabricating resonant cavity enhanced photodetectors on reflecting Si substrates. This includes Si photodetectors as well as recent advancements in Ge on Si resonant cavity enhanced photodetectors. These wafers offer the possibility of integrating a normally incident photodetector with Si receiver circuitry, reducing electrical coupling loss as well as reducing packaging and testing cost over a hybrid solution.

Keywords

cavity resonators; elemental semiconductors; germanium; integrated optoelectronics; optical fabrication; optical interconnections; optical resonators; photodetectors; silicon; Ge-Si; Ge-on-Si resonant cavity enhanced photodetectors; Si; electrical coupling loss reduction; optical interconnects; packaging reduction; photodetector-Si receiver circuitry integration; reflecting Si substrates; resonant cavity enhanced photodetectors; silicon-based photodetectors; testing cost reduction; Absorption; Bandwidth; Optical coupling; Optical fiber communication; Optical interconnections; Optical receivers; PIN photodiodes; Photodetectors; Resonance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363153

Filename

1363153