DocumentCode
2014471
Title
High speed resonant-cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation
Author
Dosunmu, Olufemi I. ; Cannon, Douglas D. ; Emsley, Matthew K. ; Kimerling, Lionel C. ; Ünlü, M. Selim
Author_Institution
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
148
Abstract
We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.
Keywords
cavity resonators; elemental semiconductors; germanium; high-speed optical techniques; integrated optoelectronics; optical communication equipment; optical resonators; photodetectors; silicon-on-insulator; 1540 nm; 3 V; Ge photodetectors; Ge-on-SOI photodetectors; Si; high speed photodetectors; monolithic integration; reflecting Si substrates; resonant-cavity enhanced photodetectors; Absorption; Bandwidth; Detectors; Materials science and technology; Monolithic integrated circuits; Photodetectors; Photonic band gap; Quantum computing; Resonance; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363154
Filename
1363154
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