DocumentCode
2014491
Title
A 20 GHz, tensile strained Ge photodetector on Si platform with detection spectrum for optical communications and on-chip applications
Author
Liu, Jifeng ; Michel, Jurgen ; Giziewicz, Wojciech ; Cannon, Douglas D. ; Jongthammanurak, Samerkhae ; Danielson, David T. ; Pan, Dong ; Yasaitis, John ; Wada, Kazumi ; Kimerling, Lionel C.
Author_Institution
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
150
Abstract
This paper presents a 20 GHz Ge photodetector on Si platform that covers a broad detection spectrum from 850-1600 nm. This device has promising applications in high capacity optical communications and on-chip Si optoelectronic circuits.
Keywords
elemental semiconductors; germanium; integrated optoelectronics; optical communication equipment; photodetectors; silicon; 20 GHz; Ge photodetector; Ge-Si; Si platform; broad detection spectrum; on-chip Si optoelectronic circuits; on-chip applications; optical communications; tensile strained; CMOS technology; Circuits; Gallium arsenide; High speed optical techniques; III-V semiconductor materials; Materials science and technology; Optical detectors; Optical devices; Optical fiber communication; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363155
Filename
1363155
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