Current oscillations in PbSnTe:In films under non-illumination conditions

Author

Klimov, Alexander E. ; Pashchin, Nikolai S. ; Sherstyakova, Valentina N. ; Shumsky, VladimirN ; Ishchenko, Denis V.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2010

fDate

June 30 2010-July 4 2010

Firstpage

101

Lastpage

105

Abstract

Under non-illumination conditions, dying oscillations of electric current in PbSnTe:In film structures were observed upon applying a constant voltage to the samples. A model for the transition of the structures to a stationary state is discussed, in which capture of electrons injected out of contacts at energy-distributed traps is assumed; this capture leads to non-monotonic variation of polarizability and injection current in PbSnTe:In.

Keywords

IV-VI semiconductors; current fluctuations; indium; lead compounds; permittivity; polarisability; semiconductor thin films; space-charge-limited conduction; tin compounds; transients; PbSnTe:In; constant voltage; current oscillations; dying oscillations; electric current; electron injection; energy-distributed trapping; injection current; nonillumination condition; nonmonotonic variation; polarizability; stationary state; structural transition; thin film structure; Films; Seminars; PbSnTe:In; current oscillations; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-6626-9

Type

conf

DOI

10.1109/EDM.2010.5568646

Filename

5568646