DocumentCode :
2014599
Title :
Current oscillations in PbSnTe:In films under non-illumination conditions
Author :
Klimov, Alexander E. ; Pashchin, Nikolai S. ; Sherstyakova, Valentina N. ; Shumsky, VladimirN ; Ishchenko, Denis V.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear :
2010
fDate :
June 30 2010-July 4 2010
Firstpage :
101
Lastpage :
105
Abstract :
Under non-illumination conditions, dying oscillations of electric current in PbSnTe:In film structures were observed upon applying a constant voltage to the samples. A model for the transition of the structures to a stationary state is discussed, in which capture of electrons injected out of contacts at energy-distributed traps is assumed; this capture leads to non-monotonic variation of polarizability and injection current in PbSnTe:In.
Keywords :
IV-VI semiconductors; current fluctuations; indium; lead compounds; permittivity; polarisability; semiconductor thin films; space-charge-limited conduction; tin compounds; transients; PbSnTe:In; constant voltage; current oscillations; dying oscillations; electric current; electron injection; energy-distributed trapping; injection current; nonillumination condition; nonmonotonic variation; polarizability; stationary state; structural transition; thin film structure; Films; Seminars; PbSnTe:In; current oscillations; trapping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
Type :
conf
DOI :
10.1109/EDM.2010.5568646
Filename :
5568646
Link To Document :
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