• DocumentCode
    2014649
  • Title

    Influence of temperature and humidity on resistance and permittivity of composite films of WO3 and B2O3 with fullerene

  • Author

    Dudnik, Alexander I. ; Bogdanova, A.V.

  • Author_Institution
    Siberian Branch, L.V. Kirenskiy Inst. of Phys., RAS, Krasnoyarsk, Russia
  • fYear
    2010
  • fDate
    June 30 2010-July 4 2010
  • Firstpage
    106
  • Lastpage
    108
  • Abstract
    The paper represents dependences of electrical resistance on irradiance and temperature for composite fullerene-WO3 films. It has been shown that the structure film-contacts is more sensitive to external influence when the film is placed between contacts. Dependencies of fullerene doped B2O3 films permittivity on temperature and humidity are given. Introduction of fullerenes results in approximately linear temperature dependence of permittivity.
  • Keywords
    boron compounds; composite materials; contact resistance; electrical resistivity; fullerenes; humidity; permittivity; semiconductor doping; semiconductor materials; semiconductor thin films; tungsten compounds; WO3-B2O3:C60C70; composite fullerene films; composite semiconductor properties; contact resistance; doped films; electrical resistivity; humidity; intrinsic n-type semiconductor; permittivity; Argon; Nanostructures; Permittivity; Physics; B2O3; WO3; composite; fullerene;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-6626-9
  • Type

    conf

  • DOI
    10.1109/EDM.2010.5568647
  • Filename
    5568647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014649