DocumentCode
2014664
Title
Observations in ZnO thin films based pressure sensors
Author
Al Ahmad, Mahmoud ; Al Taradeh, Nedal
Author_Institution
Electr. Eng. Dept., UAE Univ., Al Ain, United Arab Emirates
fYear
2015
fDate
1-4 Feb. 2015
Firstpage
1
Lastpage
5
Abstract
Recently real time monitoring systems of pressure variations has received noticeable interest. This work highlights some important issues and summaries several observations in published Zinc Oxide (ZnO) thin films based pressure sensor (TFPS) structures. New models for IV curve, pressure-output voltage variations have been developed based on empirical observations. In addition, the relations between the capacitance, sensitivity and resistance versus pressure variations have been modeled with noticeable agreements between evaluated and experimental results.
Keywords
II-VI semiconductors; capacitance; pressure sensors; semiconductor thin films; thin film sensors; thin film transistors; zinc compounds; I-V curve; TFT pressure sensor; ZnO; capacitance; pressure-output voltage variations; resistance-pressure variations; sensitivity; zinc oxide thin films; Equations; Fitting; Logic gates; Mathematical model; Sensors; Thin film transistors; Zinc oxide; Characterizations; ZnO; design rules; materials parameters; piezoelectricity; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
GCC Conference and Exhibition (GCCCE), 2015 IEEE 8th
Conference_Location
Muscat
Type
conf
DOI
10.1109/IEEEGCC.2015.7060040
Filename
7060040
Link To Document