Title :
Fabrication of quantum dots of InAs built in matrix of GaAs by molecular beam epitaxy
Author :
Zaichenko, Alexander A. ; Semyagin, B.R.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
Structures with quantum dots InAs on surface GaAs of a various thickness and at various temperatures by molecular beam epitaxy have been fabricated. Effects of growth conditions on sizes and density of quantum dots have been studied.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; GaAs; InAs; material fabrication; molecular beam epitaxy; quantum dots; Atomic measurements; Search problems; Structures; quantum dots;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568648
