DocumentCode
2014674
Title
Fabrication of quantum dots of InAs built in matrix of GaAs by molecular beam epitaxy
Author
Zaichenko, Alexander A. ; Semyagin, B.R.
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
99
Lastpage
100
Abstract
Structures with quantum dots InAs on surface GaAs of a various thickness and at various temperatures by molecular beam epitaxy have been fabricated. Effects of growth conditions on sizes and density of quantum dots have been studied.
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; GaAs; InAs; material fabrication; molecular beam epitaxy; quantum dots; Atomic measurements; Search problems; Structures; quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568648
Filename
5568648
Link To Document